BSX45-bsx46-bsx47 comset semiconductors 1/3 n n p p n n m m e e d d i i u u m m p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r s s the BSX45-bsx46-bsx47 are npn transistors mounted in to-39 metal package. they are intended for use in general industrial applications. high current and low voltage. compliance to rohs. absolute maximum ratings symbol ratings value unit BSX45 bsx46 bsx47 v ceo collector-emitter voltage i b =0 40 60 80 v v cbo collector-base voltage i e =0 80 100 120 v v ebo emitter-base voltage i c =0 7 v i c collector current 1 a i cm collector peak current 1.5 a i bm base peak current 200 ma p d total power dissipation t amb = 25 6.25 w t j junction temperature 200 c t amb operating ambient temperature -65 to +150 t st g storage temperature range -65 to +150 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to ambient 200 c/w r thj-c thermal resistance, junction to case 28 c/w switching times symbol ratings value unit t on turn-on time i con = 100ma; i bon = 5 ma i bof f = -5 ma 200 ns t of f turn-off time 850 ns b c e
BSX45-bsx46-bsx47 26/09/2012 comset semiconductors 2/3 electrical characteristics tj=25c unless otherwise specified symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb = 60 v, i e =0 BSX45 - - 30 na bsx46 v cb = 80 v, i e =0 bsx47 v cb = 60 v, i e = 0 t j = 150c BSX45 - - 10 a bsx46 v cb = 80 v, i e =0 t j = 150c bsx47 i ebo emitter cutoff current v be = 5.0 v, i c =0 - - 10 na v ce(sat) collector-emitter saturation voltage i c = 1 a, i b = 100 ma BSX45 - - 1 v bsx46 i c = 500 ma i b = 25 ma bsx47 - - 0.9 v be base-emitter voltage i c = 100 ma, v ce = 1 v - - 1 v i c = 500 ma, v ce = 1 v 0.75 - 1.5 i c = 1 a, v ce = 1 v - - 2 h fe dc current gain i c = 100 a v ce = 1 v BSX45/10 15 40 - - bsx46/10 bsx47/10 BSX45/16 25 90 - bsx46/16 i c = 100 ma v ce = 1 v BSX45/10 63 100 160 bsx46/10 bsx47/10 BSX45/16 100 160 250 bsx46/16 bsx47/16 i c = 500 ma v ce = 1 v BSX45/10 25 40 - bsx46/10 bsx47/10 BSX45/16 35 60 - bsx46/16 i c = 1 a, v ce = 1 v BSX45/10 - 20 - bsx46/10 bsx47/10 BSX45/16 - 30 - bsx46/16 f t transition frequency i c = 50 ma, v ce = 10 v f = 100mhz 50 - - mhz f noise figure i c = 100 a, v ce = 5 v, rs=1k ? f = 1khz, b =200hz - 3.5 - db
BSX45-bsx46-bsx47 26/09/2012 comset semiconductors 3/3 mechanical data case to-39 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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